| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHW40N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW20N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| IKW40N65WR5-16 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX14H4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五（DRM）的|00VAR120
|
Mitsubishi Electric, Corp.
|
| ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ...
Reverse Path Amplifiers
Reverse Amplifier with Step Attenuator
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
